2000. 3. 7
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC2026
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
GENERAL PURPOSE APPLICATION.
FEATURES
Low Collector Saturation Voltage
: V
CE(sat)
=1.0V(Max.) at I
C
=2A, I
B
=0.2A.
Complementary to KTA1046.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
10.30 MAX
15.30 MAX
2.70 0.30
0.85 MAX
3.20 0.20
3.00 0.30
A
B
C
D
E
F
G
12.30 MAX
0.75 MAX
H
13.60 0.50
3.90 MAX
1.20
1.30
2.54
4.50 0.20
6.80
2.60 0.20
10
J
K
L
M
N
O
P
Q
R
F
O
Q
1
2
3
L
P
N
B
G
J
M
D
N
T
T
H
E
R
T
V
S
K
L
U
T
S
0.5
5
25
2.60 0.15
V
U
D
A
C
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
60
V
Emitter-Base Voltage
V
EBO
7
V
Collector Current
I
C
3
A
Base Current
I
B
0.5
A
Collector Power
Dissipation
Ta=25
P
C
2
W
Tc=25
20
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=60V, I
E
=0
-
-
100
A
Emitter Cut-off Current
I
EBO
V
EB
=7V, I
C
=0
-
-
100
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=50mA, I
B
=0
60
-
-
V
DC Current Gain
h
FE
(Note)
V
CE
=5V, I
C
=0.5A
100
-
300
Collector Emitter Saturation Voltage
V
CE(sat)
I
C
=2A, I
B
=0.2A
-
0.25
1.0
V
Base-Emitter Voltage
V
BE
V
CE
=5V, I
C
=0.5A
-
0.7
1.0
V
Transition Frequency
f
T
V
CE
=5V, I
C
=0.5A
-
30
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
35
-
pF
Switching Time
Turn-on Time
t
on
-
0.65
-
S
Storage Time
t
stg
-
1.3
-
Fall Time
t
f
-
0.65
-
Note : h
FE
Classification Y:100 200, GR:150 300
I
B1
15
B1
I
CC
V =30V
I
B2
I
B2
20
sec
I =-I =0.2A
1%
B1
B2
OUTPUT
DUTY CYCLE
INPUT
<
=
2000. 3. 7
2/2
KTC2026
Revision No : 3
COLLECTOR CURRENT I (A)
0
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
h - I
C
COLLECTOR CURRENT I (A)
0.02
0.05 0.1
0.3
FE
DC CURRENT GAIN h
10
COLLECTOR-EMITTER SATURATION
CE(sat)
10
3
0.05
0.02
COLLECTOR CURRENT I (A)
C
V - I
1
2
3
4
5
6
7
8
0.5
1.0
1.5
2.0
2.5
3.0
COMMON EMITTER
Tc=25 C
60
50
40
30
20
90
80
70
0
I =10mA
B
FE
C
1
3
10
30
50
100
300
COMMON EMITTER
V =5V
CE
Tc=100 C
Tc=25 C
Tc=-25 C
CE(sat)
C
VOLTAGE V (V)
1
0.3
0.1
5
0.03
0.05
0.1
0.3
0.5
1
COMMON EMITTER
I /I =10
C B
Tc=
100
C
Tc=25 C
Tc=-25 C
COLLECTOR POWER DISSIPATION P (W)
0
C
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
25
50
75
100
125
150
175
200
5
10
15
20
25
30
35
40
Tc=Ta
INFINITE HEAT SINK
300
x300x2mm Al
HEAT SINK
200
x200x2mm Al
HEAT SINK
100
x100x1mm Al
HEAT SINK
100
x100x1mm Fe
HEAT SINK
50
x50x1mm Al
HEAT SINK
50
x50x1mm Fe
HEAT SINK
NO HEAT
SINK
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
I MAX.(PULSED)*
C
(CONTINUOUS)
C
I MAX.
SAFE OPERATING AREA
CE
COLLECTOR-EMITTER VOLTAGE V (V)
1
3
10
100
0.1
C
COLLECTOR CURRENT I (A)
30
5
5 0
0.3
0.5
1
3
5
10
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
SINGLE NONREPETITIVE
PULSE Tc=25 C
*
1mS*
10mS*
10
0mS*
DC
OPE
RAT
IO
N
V MAX.
CEO
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